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Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices
Liubomyr S Monastyrskii1, Bogdan S Sokolovskii2, Mariya P Alekseichyk1
1Department of Radioelectronic and Computer Systems, Faculty of Electronics and Computer Technologies, Ivan Franko National University of Lviv, 50 Dragomanov Street, 79005, Lviv, Ukraine.
Abstract:
The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.
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