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Three-Dimensional Analysis of Strain01:29

Three-Dimensional Analysis of Strain

682
Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...
682
Mohr's Circle for Plane Strain01:18

Mohr's Circle for Plane Strain

1.3K
Mohr's circle is a crucial graphical method used to analyze plane strain by plotting strain on a set of cartesian coordinates, where the abscissa is normal strain ∈ and the ordinate is shear strain γ. Similarly to Mohr’s circle for plane stress, two points X and Y are plotted. Their coordinates are (∈x, -γXY) and (∈Y, γXY), respectively.
Mohr's circle visually represents the strain states under various conditions, which is essential for...
1.3K
Measurements of Strain01:27

Measurements of Strain

2.7K
Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain...
2.7K
Transformation of Plane Strain01:12

Transformation of Plane Strain

588
When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
588
Bending of Curved Members - Strain Analysis01:14

Bending of Curved Members - Strain Analysis

566
The mechanics of deformation in curved members, such as beams or arches, under bending moments, involve complex responses. When such a member, symmetric about the y-axis and shaped like a segment of a circle centered at point C, is subjected to equal and opposite forces, its curvature and surface lengths change significantly. This alteration results in the shift of the curvature's center from C to C', indicating a tighter curve.
The important part of bending analysis for such a member...
566
Shearing Strain01:20

Shearing Strain

1.6K
The shearing strain represents a cubic element's angular change when subjected to shearing stress. This type of stress can transform a cube into an oblique parallelepiped without influencing normal strains. The cubic element experiences a significant transformation when exposed solely to shearing stress. Its shape alters from a perfect cube into a rhomboid, clearly demonstrating the effect of shearing strain. The degree of this strain is considered positive if it reduces the angle between the...
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Related Experiment Video

Updated: Mar 5, 2026

Micro/Nano-scale Strain Distribution Measurement from Sampling Moir&#233; Fringes
06:56

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Published on: May 23, 2017

12.8K

STEM moiré analysis for 2D strain measurements.

Akimitsu Ishizuka1, Martin Hytch2, Kazuo Ishizuka1

  • 1HREM Research Inc., Higashimatsuyama 355-0055 , Japan.

Microscopy (Oxford, England)
|March 25, 2017
PubMed
Summary

Scanning transmission electron microscopy (STEM) moiré patterns reveal strain in silicon devices. A novel calibration method uses these patterns for accurate, simplified strain analysis, even with misaligned scans.

Keywords:
STEMaliasinggeometric phasemoiréscan step calibrationstrain

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Last Updated: Mar 5, 2026

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electron Microscopy

Background:

  • Moiré patterns in Scanning Transmission Electron Microscopy (STEM) arise from the interplay between scan step and crystalline periodicity.
  • Typically, STEM moiré fringes are unidirectional, reflecting a single set of lattice planes.

Purpose of the Study:

  • To determine strains in silicon devices using STEM moiré fringes.
  • To develop an accurate, self-contained calibration method for STEM scan steps derived from moiré patterns.
  • To simplify STEM moiré experiments and enable two-dimensional strain mapping.

Main Methods:

  • Analysis of the spacing and orientation of one-directional STEM moiré fringes.
  • Development of an independent calibration scheme for the STEM scan step using moiré patterns.
  • Application of the geometric phase concept for extracting two-dimensional strain information.

Main Results:

  • Accurate strain determination in silicon devices from one-directional STEM moiré fringes.
  • A novel calibration method that utilizes the moiré pattern itself for precise scan step determination.
  • Demonstration that the calibration is effective even when the scan direction is not perfectly aligned with the crystal lattice.
  • Successful extraction of two-dimensional strain information from two one-directional moiré patterns.

Conclusions:

  • STEM moiré patterns provide a powerful tool for quantitative strain analysis in semiconductor devices.
  • The proposed self-calibration method enhances the accuracy and ease of STEM moiré experiments.
  • This approach facilitates comprehensive two-dimensional strain mapping, crucial for understanding material properties and device performance.