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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars.

A Higuera-Rodriguez¹, B Romeira¹, S Birindelli¹

¹Institute for Photonic Integration, ‡Photonic Integration, Department of Electrical Engineering, §Photonics and Semiconductor Nanophysics, Department of Applied Physics, ∥Plasma and Materials Processing, Department of Applied Physics, and ⊥NanoLab@TU/e Eindhoven University of Technology , Postbus 513, 5600 MB Eindhoven, The Netherlands.

|March 25, 2017

Summary

This summary is machine-generated.

Researchers enhanced indium gallium arsenide (InGaAs) nanostructures by reducing surface recombination. This boosts photoluminescence intensity and carrier lifetimes, crucial for advanced photonic devices.

Keywords:

InGaAs nanopillars surface passivation surface recombination velocity

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Indium gallium arsenide (InGaAs) is vital for 1.55 μm photonics.
Surface states in InGaAs cause nonradiative recombination, hindering nanophotonic device performance.

Purpose of the Study:

To suppress surface recombination in InGaAs/InP nanostructures.
To enhance photoluminescence and carrier lifetimes for improved nanodevices.

Main Methods:

Chemical treatment using ammonium sulfide ((NH4)2S).
Silicon oxide (SiOx) coating for passivation.
Photoluminescence (PL) intensity and decay time measurements.

Main Results:

80-fold increase in PL intensity at 1550 nm.
PL decay time increased from ~100 ps to ~25 ns for 0.3 μm pillars.
Record-low surface recombination velocity of ~260 cm/s achieved.

Conclusions:

Combined sulfur treatment and SiOx coating effectively passivate InGaAs nanostructures.
Enhanced passivation significantly improves optical properties.
Results pave the way for high-performance nanoscale optoelectronics.