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Updated: Aug 15, 2026
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by
Heng Li1, Hui-Yu Cheng2, Wei-Liang Chen2
1Dept. of Photonics &Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan.
Abstract:
We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1-xN/GaN MQWs active layer.
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