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Related Experiment Videos

Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides.

Richard Hahnkee Kim1, Jinseong Lee1, Kang Lib Kim1

  • 1Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|April 4, 2017
PubMed
Summary

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This summary is machine-generated.

Transition metal dichalcogenide (TMD) nanosheets were used as floating gates in novel organic field-effect transistor (FET) memories. These TMD-based memories demonstrate excellent performance and flexibility, paving the way for advanced electronic devices.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Nonvolatile field-effect transistor (FET) memories are crucial for data storage.
  • Transition metal dichalcogenide (TMD) nanosheets possess unique photoelectronic properties.
  • Current TMD-based memories primarily use nanosheets as semiconducting channels, with limited exploration as floating gates.

Purpose of the Study:

  • To demonstrate a floating-gate organic-FET memory utilizing solution-processed TMD nanosheets as an all-in-one floating-gate/tunneling layer.
  • To investigate the charge-trapping and detrapping properties of Molybdenum disulfide (MoS2) nanosheets.
  • To explore the potential of other TMDs (MoSe2, WSe2) and flexible substrates for memory applications.

Main Methods:

  • Liquid exfoliation of Molybdenum disulfide (MoS2) nanosheets using amine-terminated polystyrene.
Keywords:
flexible memoriesfloating-gate/tunneling layersliquid exfoliationnonvolatile memoriestransition metal dichalcogenides

Related Experiment Videos

  • Fabrication of an all-in-one floating-gate/tunneling layer with controlled MoS2 concentration.
  • Characterization of memory performance, including ON/OFF ratio, endurance, and data retention.
  • Development of similar layers using Molybdenum diselenide and Tungsten disulfide.
  • Fabrication and testing of flexible TMD memories on plastic substrates.

    • Main Results:

    • Optimized MoS2-based nonvolatile memory achieved an ON/OFF ratio > 10^4.
    • Demonstrated program/erase endurance exceeding 400 cycles and data retention > 7 x 10^3 s.
    • Successfully developed all-in-one layers with MoSe2 and WSe2.
    • Flexible TMD memories on plastic substrates showed comparable performance to hard substrate counterparts.
    • Flexible devices maintained performance after over 500 bending cycles at a 4.0 mm radius.

    Conclusions:

    • Solution-processed TMD nanosheets are effective for all-in-one floating-gate/tunneling layers in organic FET memories.
    • The developed TMD memories exhibit promising nonvolatile memory characteristics.
    • The technology is suitable for flexible electronic applications, showing robustness under mechanical stress.