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Optimum Design Rules for CMOS Hall Sensors
Marco Crescentini1,2, Michele Biondi3, Aldo Romani4,5
1Department of Electrical, Electronic and Information Engineering "G. Marconi"-DEI, University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy. marco.crescentini3@unibo.it.
Abstract:
This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes.
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