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Optimum Design Rules for CMOS Hall Sensors.
Marco Crescentini1,2, Michele Biondi3, Aldo Romani4,5
1Department of Electrical, Electronic and Information Engineering "G. Marconi"-DEI, University of Bologna, Cesena Campus, Via Venezia 52, 47521 Cesena, Italy. marco.crescentini3@unibo.it.
Sensors (Basel, Switzerland)
|April 5, 2017
Summary
This study explores how design choices impact CMOS Hall sensor performance, offering practical rules for engineers. Key factors analyzed include aspect ratio and doping, affecting sensitivity, power, and bandwidth.
Area of Science:
- Solid State Physics
- Semiconductor Device Physics
- Microelectronics Engineering
Background:
- CMOS Hall sensors are crucial for magnetic field detection.
- Optimizing their performance requires understanding design parameter impacts.
- General rectangular geometries simplify analysis for broad applicability.
Purpose of the Study:
- To investigate the influence of design parameters on CMOS Hall sensor performance.
- To provide insights into current-related sensitivity, power consumption, and bandwidth.
- To establish design rules for electronic designers.
Main Methods:
- Utilized 3D-Technology Computer-Aided Design (TCAD) simulations.
- Employed a galvanomagnetic transport model incorporating the Lorentz force.
- Focused analysis on rectangular Hall probes for generalizable results.
Main Results:
- Identified key trade-offs between design parameters and sensor performance metrics.
- Quantified the effects of aspect ratio, doping concentration, and bias.
- Demonstrated the relationship between design choices and sensitivity, power, and bandwidth.
Conclusions:
- Design parameters significantly affect CMOS Hall sensor performance.
- Simulation-derived trade-offs and design rules aid in Hall probe conception.
- This work provides a foundation for optimizing future Hall sensor designs.