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Related Experiment Videos

33 W continuous output power semiconductor disk laser emitting at 1275 nm.

Tomi Leinonen, Vladimir Iakovlev, Alexei Sirbu

    Optics Express
    |April 7, 2017
    PubMed
    Summary

    This study presents a semiconductor disk laser achieving 33W output power at 1275nm. Wafer-fused gain mirrors enable scalable power with pump spot size.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Materials Science

    Background:

    • Semiconductor disk lasers (SDLs) offer high power and efficiency.
    • Wafer fusion is a technique for integrating dissimilar semiconductor materials.
    • Achieving high output power requires optimized gain elements and thermal management.

    Purpose of the Study:

    • To demonstrate a 1275nm semiconductor disk laser using wafer-fused gain mirrors.
    • To investigate the power scaling capabilities of these gain mirrors.
    • To analyze the laser's performance under varying thermal conditions.

    Main Methods:

    • Fabrication of a semiconductor disk laser utilizing a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror.
    • Integration of a built-in gold (Au) reflector for unabsorbed pump light.

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  • Characterization of output power at different heat-sink temperatures and pump spot sizes.

    • Main Results:

    • The laser achieved a maximum output power of 33W at -5°C with a 0.86mm pump spot and 2.5% output coupler.
    • Output power decreased to ~24W when the heat-sink temperature increased to 15°C.
    • Wafer-fused gain mirrors demonstrated high optical quality and uniformity, supporting power scaling.

    Conclusions:

    • Wafer-fused gain mirrors are suitable for high-power semiconductor disk lasers.
    • The demonstrated laser design shows potential for further power scaling.
    • Optimized thermal management is crucial for maximizing laser output power.