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Related Experiment Videos

Work function mapping of MoOx thin-films for application in electronic devices.

André L F Cauduro1, Roberto Dos Reis2, Gong Chen2

  • 1NanoSYD University of Southern Denmark, Alsion 2, 6400-Sønderborg, Denmark.

Ultramicroscopy
|April 12, 2017
PubMed
Summary

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Understanding surface morphology is key for electronic devices. Low-energy electron microscopy revealed that molybdenum oxide films grown in oxygen-deficient environments exhibit uniform electronic properties, unlike those grown in oxygen excess.

Area of Science:

  • Materials Science
  • Surface Science
  • Electronic Device Physics

Background:

  • Charge transfer at interfaces is crucial for electronic device performance, particularly in photovoltaic (PV) cells.
  • Understanding the interplay between structural and electronic surface morphology is essential for optimizing these devices.

Purpose of the Study:

  • To investigate the unoccupied electronic states and surface morphology of molybdenum oxide (MoOx) thin-films.
  • To correlate these properties with different oxygen stoichiometry in the films.

Main Methods:

  • Utilized low-energy electron microscopy (LEEM) to probe unoccupied electronic states.
  • Employed mirror electron microscopy (MEM) mode to extract surface topography.
  • Analyzed MoOx thin-films grown in oxygen-rich (x∼3.16) and oxygen-deficient (x∼2.57) environments.
Keywords:
LeemMoO(x) thin-filmsMorphologyReactive sputteringSurface aggregationWork function

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Main Results:

  • Films grown in oxygen-deficient environments (x∼2.57) displayed homogenous surface morphology and uniform electronic levels (work function).
  • Films grown in oxygen-rich environments (x∼3.16) showed nanoaggregates with varying work functions on flat surface areas.
  • 2D work function maps were successfully correlated with surface topography.

Conclusions:

  • Oxygen stoichiometry significantly impacts the surface morphology and electronic properties of MoOx thin-films.
  • Uniform electronic properties are achievable in oxygen-deficient MoOx films, which is beneficial for stable electronic device interfaces.
  • LEEM and MEM are effective techniques for characterizing surface electronic and structural properties.