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Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions
Peiqi Zhou1, Zhikai Gan1, Xu Huang1
1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, and Key Laboratory of Thin Film and microfabrication of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P. R. China.
Abstract:
In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous reported researches in magnetic materials. This effect is attributed to the combined result of the influence of magnetic field on diffusion current and the rectification property of our anisotropic structure. This work may expand the application of LPE in magnetism field such as magnetic sensor and magnetoresistance, and it suggests a new way to investigate the carrier transport in Schottky junctions under magnetic field.