Switching of Resistive Memory Behavior from Binary to Ternary Logic via Alteration of Substituent Positioning on the

Hing Chan1, Hok-Lai Wong1, Maggie Ng1

  • 1Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong , Pokfulam Road, Hong Kong, PR China.

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