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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

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Published on: December 4, 2014

Highly Oriented Atomically Thin Ambipolar MoSe₂ Grown by Molecular Beam Epitaxy.

Ming-Wei Chen^1,2, Dmitry Ovchinnikov^1,2, Sorin Lazar³

¹Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne, Switzerland.

|May 23, 2017

Summary

This summary is machine-generated.

Atomically thin molybdenum diselenide (MoSe2) was grown using molecular beam epitaxy. This research demonstrates ambipolar transport in MoSe2 films, revealing that 2D variable-range hopping limits conductivity due to film disorder.

Keywords:

MoSe2 ambipolar electrical transport epitaxial growth transmission electron microscopy two-dimensional materials two-dimensional semiconductors

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), exhibit unique properties in atomically thin layers.
Large-area growth and property characterization of TMDCs are critical for realizing their technological potential.

Purpose of the Study:

To grow large-area, atomically thin molybdenum diselenide (MoSe2) films using molecular beam epitaxy (MBE) on a GaAs(111)B substrate.
To investigate the structural, optical, and electrical properties of the grown MoSe2 films.
To achieve and analyze ambipolar transport in MBE-grown MoSe2.

Main Methods:

Growth of atomically thin MoSe2 films on GaAs(111)B using molecular beam epitaxy (MBE).
Optimization of growth temperature to achieve highly aligned crystalline films.
Transfer of MoSe2 films onto insulating substrates for property probing.
Electrical transport measurements utilizing polymer electrolyte gating.

Main Results:

Successfully grew atomically thin MoSe2 films on GaAs(111)B with no interfacial compounds detected.
Achieved highly aligned MoSe2 films with two distinct crystalline orientations by optimizing growth temperature.
Demonstrated ambipolar transport in the transferred MoSe2 films via polymer electrolyte gating.
Observed temperature-dependent transport characteristics consistent with the 2D variable-range hopping (2D-VRH) model.

Conclusions:

MBE is a viable method for growing high-quality, aligned MoSe2 films on GaAs(111)B.
Ambipolar transport can be achieved in MBE-grown MoSe2, indicating potential for electronic device applications.
Film disorder significantly impacts charge transport, as described by the 2D-VRH model.