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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

Nanoscale Junction Formation by Gas-Phase Monolayer Doping.

Peyman Taheri^1,2, Hossain M Fahad^1,3,2, Mahmut Tosun^1,3,2

¹Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.

ACS Applied Materials & Interfaces

|May 27, 2017

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Gas-phase monolayer doping (GP-MLD) offers a damage-free method for creating controlled ultrashallow junctions in silicon and germanium. This technique enables precise nanoscale junction formation essential for advanced transistor technology.

Area of Science:

Semiconductor device fabrication
Materials science
Nanotechnology

Background:

Transistor scaling faces challenges in forming controlled ultrashallow junctions.
Monolayer doping (MLD) is a promising technique but traditionally relies on solution processing.
Gas-phase processing offers superior uniformity and conformal coverage for manufacturing.

Purpose of the Study:

To introduce and demonstrate a novel gas-phase monolayer doping (GP-MLD) technology for silicon and germanium.
To enable the formation of controlled ultrashallow junctions using a gas-phase approach.
To assess the feasibility and characteristics of GP-MLD for nanoscale transistor applications.

Main Methods:

Sequential pulse-purge cycles of gas-phase dopant molecules for monolayer formation.

Keywords:

area-selective doping gas-phase monolayer doping molecular adsorption nanoscale junction rapid thermal annealing

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Last Updated: Mar 1, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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Utilized Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy for adsorption mechanism characterization.

Employed secondary ion mass spectrometry and sheet resistance measurements to analyze junction depth and dopant dose.

Main Results:

Successfully formed ultrashallow boron- and phosphorus-doped junctions on Si and Ge surfaces.
Achieved sub-5 nm junction depths with high dopant doses.
Demonstrated area selectivity through lithographic patterning of the dopant monolayer.

Conclusions:

GP-MLD is a versatile and effective method for fabricating controlled ultrashallow junctions.
The gas-phase approach overcomes limitations of solution-based MLD for manufacturing.
GP-MLD shows significant potential for next-generation nanoscale transistor processing.