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Surface Functionalization of Black Phosphorus via Potassium toward High-Performance Complementary Devices.
Cheng Han1,2,3,4, Zehua Hu3,4, Lidia C Gomes4
1SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University , Shenzhen 518060, China.
Nano Letters
|June 20, 2017
Summary
Potassium surface modification enhances electron doping and mobility in few-layer black phosphorus field-effect transistors. This breakthrough enables high-performance complementary electronics, including p-n diodes, using black phosphorus nanosheets.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional black phosphorus (BP) typically exhibits hole-dominated ambipolar transport.
- This characteristic limits its use in complementary electronic circuits.
Purpose of the Study:
- To develop a surface functionalization strategy for few-layer black phosphorus.
- To enable high-performance complementary device applications using black phosphorus.
Main Methods:
- In situ surface modification of few-layer black phosphorus with potassium.
- In situ photoelectron spectroscopy for characterization.
- Lithography for spatially controlled doping.
Main Results:
- Potassium induces significant electron doping and bandgap reduction in black phosphorus.
- Electron mobility enhanced by over an order of magnitude (262 cm2 V-1 s-1).
- Demonstrated high-performance complementary devices, including a p-n homojunction diode with an on/off ratio of ~104.
Conclusions:
- Surface functionalization with potassium is an effective method to tune black phosphorus properties.
- This approach enables the development of high-performance complementary electronics based on black phosphorus.
- Black phosphorus is a promising material for future complementary electronic applications.
