Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

927
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
927
MOSFET01:16

MOSFET

1.5K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Assessment of Technical and Clinical Success of Percutaneous Transhepatic Biliary Drainage for Postoperative Bile Leaks: A Favorable Alternative to Early Surgical Revision?

Cureus·2026
Same author

Interacting effects of human presence and landscape modification on birds and mammals.

Science (New York, N.Y.)·2026
Same author

Rabies in a dog commercially imported into Germany from Russia, 2026.

Euro surveillance : bulletin Europeen sur les maladies transmissibles = European communicable disease bulletin·2026
Same author

Extracorporeal membrane oxygenation, acute kidney injury, fluid balance, and continuous renal replacement therapy: Acute Disease Quality Initiative (ADQI) and Extracorporeal Life Support Organization (ELSO) joint consensus conference.

Intensive care medicine·2026
Same author

Impact of older donor age in kidney transplants in a biopsy-based observational study.

JCI insight·2026
Same author

Prevention of Postoperative Endophthalmitis after Cataract Surgery with an Intraoperative Gentamycin Antibiotic Prophylaxis.

Klinische Monatsblatter fur Augenheilkunde·2026

Related Experiment Video

Updated: Feb 28, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Thermal Light Emission from Monolayer MoS2.

Lukas Dobusch1, Simone Schuler1, Vasili Perebeinos2

  • 1Institute of Photonics, Vienna University of Technology, Gußhausstraße 27-29, 1040, Vienna, Austria.

Advanced Materials (Deerfield Beach, Fla.)
|June 20, 2017
PubMed
Summary

Freely suspended molybdenum disulfide (MoS2) monolayers emit visible light when heated by electrical current. This light emission originates from thermally excited states and occurs in a narrow region due to poor heat dissipation.

Keywords:
MoS2field-effect transistorslight emissionthermal conductivity

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.2K

Related Experiment Videos

Last Updated: Feb 28, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.7K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Layered transition metal dichalcogenides (TMDs) like MoS2 and WSe2 are explored for electronic and optoelectronic devices.
  • TMDs possess unique properties such as low thermal conductivity and tunable bandgaps, crucial for advanced applications.

Purpose of the Study:

  • To investigate light emission from suspended MoS2 monolayers under electrical stress.
  • To explore the relationship between Joule heating, electron temperature, and optical properties in 2D materials.

Main Methods:

  • Fabrication of freely suspended MoS2 monolayer devices in vacuum.
  • Electrical characterization to induce Joule heating and measure device conductance.
  • Optical emission analysis to identify the source and characteristics of emitted light.

Main Results:

  • A suspended MoS2 monolayer emitted visible light due to Joule heating, reaching electron temperatures of 1500-1600 K.
  • Light emission was localized to a ≈50 nm region, attributed to thermally populated exciton states.
  • Negative differential electrical conductance was observed concurrently with light emission.

Conclusions:

  • Suspended MoS2 monolayers can function as efficient light emitters when subjected to significant Joule heating.
  • The study highlights the potential of 2D materials for optoelectronic applications by controlling thermal and electrical properties.
  • Poor heat dissipation in suspended devices is key to achieving high electron temperatures and observable light emission.