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Related Experiment Video

Updated: Feb 28, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Published on: April 12, 2018

Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors.

Xuegang Chen¹, Xin Zhang¹, Mark A Koten²

¹Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.

Advanced Materials (Deerfield Beach, Fla.)

|June 20, 2017

Summary

This summary is machine-generated.

Complex oxide interfaces enable novel functionalities. Researchers enhanced Mott field-effect transistors using charge transfer between SmNdNiO3 and LaSrMnO3, achieving a giant ferroelectric field effect with improved resistance modulation.

Keywords:

Mott insulators charge transfer complex oxide interfaces ferroelectric field effect strongly correlated oxides

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

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Published on: August 15, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Heteroepitaxial coupling in complex oxides engineers charge properties for unique functionalities.
Strongly correlated materials offer properties not found in bulk forms.

Purpose of the Study:

To exploit the charge-transfer effect between Sm0.5Nd0.5NiO3 (SNNO) and La0.67Sr0.33MnO3 (LSMO) for enhanced ferroelectric field effects.
To realize a giant enhancement in a prototype Mott field-effect transistor.

Main Methods:

Utilized charge transfer between SNNO and LSMO in bilayer channels.
Employed a ferroelectric Pb(Zr,Ti)O3 (PZT) gate to induce nonvolatile resistance modulation.
Conducted X-ray absorption spectroscopy, X-ray photoelectron spectroscopy, and first-principles density functional theory calculations.

Main Results:

Bilayer SNNO/LSMO channels showed a two-orders-of-magnitude higher resistance-switching ratio than single-layer SNNO at 300 K.
Observed charge transfer of approximately 0.1 electron per 2D unit cell between interfacial Mn and Ni layers.
Demonstrated nonvolatile resistance modulation via PZT gate switching.

Conclusions:

The interplay between charge screening and charge transfer at interfaces is key to enhanced performance.
This strategy offers a pathway for designing functional complex oxide interfaces.
Highlights potential for high-performance nanoelectronic and spintronic applications.