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Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various
Ho-Kun Sung1, Tian Qiang2, Zhao Yao3
1Korea Advanced Nano Fab Center (KANC), 109 Gwanggyo-Ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-270, Republic of Korea.
Scientific Reports
|June 22, 2017
Summary
This study details silicon carbide (SiC) etching using ICP-RIE to create vertical and beveled structures. Optimized gas mixtures achieve precise vertical, large-angle, and small-angle bevels for microelectronic devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Chemical Engineering
Background:
- Silicon carbide (SiC) is crucial for high-performance microelectronic applications.
- Precise etching of SiC is essential for fabricating advanced semiconductor devices.
- Existing etching techniques face challenges in achieving controlled vertical and beveled structures.
Purpose of the Study:
- To develop and validate an Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) method for SiC.
- To achieve precise control over vertical and beveled structures in SiC.
- To optimize gas mixtures and ratios for specific etching profiles.
Main Methods:
- Utilized ICP-RIE for silicon carbide etching.
- Employed various gas mixtures including SF6+O2, BCl3+N2, and Cl2+O2.
- Systematically varied gas ratios to control etching angles and rates.
Main Results:
- Achieved near-vertical etching (up to 87°) using SF6+O2 with a rate of 3050 Å/min.
- Controlled large-angle bevels (40°-80°) using BCl3+N2 mixtures.
- Fabricated small-angle bevels (7°-17°) using Cl2+O2 mixtures, with a minimum of 7°.
Conclusions:
- Demonstrated a versatile ICP-RIE process for fabricating SiC structures with controlled vertical and bevel angles.
- The optimized etching parameters enable precise fabrication for diverse microelectronic applications.
- Results provide a foundation for enhancing performance in devices like MMICs, diodes, and photodiodes.
