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Fluffy and Ordered Graphene Multilayer Films with Improved Electromagnetic Interference Shielding over X-Band
Zicheng Wang1, Renbo Wei1, Xiaobo Liu1
1Research Branch of Advanced Functional Materials, School of Microelectronics and Solid-State Electronics, High Temperature Resistant Polymer and Composites Key Laboratory of Sichuan Province, University of Electronic Science and Technology of China , Chengdu 610054, China.
Highly ordered nitrogen-doped graphene multilayer films were created using thermal annealing. These films exhibit enhanced electrical conductivity and superior electromagnetic interference shielding, offering a competitive advantage for practical applications.
Area of Science:
- Materials Science
- Nanotechnology
- Chemistry
Background:
- Graphene oxide (GO) and copper phthalocyanine (CuPc) are key precursors for advanced materials.
- Fabricating ordered graphene structures with specific properties remains a challenge.
- Nitrogen doping and controlled void formation are crucial for enhancing graphene's functionality.
Purpose of the Study:
- To develop a method for creating highly ordered nitrogen-doped graphene multilayer films.
- To investigate the synergistic effects of thermal annealing GO/CuPc multilayers.
- To evaluate the electrical conductivity and electromagnetic interference (EMI) shielding performance of the fabricated films.
Main Methods:
- Fabrication of graphene oxide/copper phthalocyanine (GO/CuPc) multilayer films.
- Thermal annealing of the multilayer films to induce graphitization and nitrogen doping.
- Characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS).
- Measurement of electrical conductivity and EMI shielding effectiveness.
Main Results:
- Successfully fabricated highly ordered nitrogen-doped graphene multilayer films with large interlayer voids.
- Demonstrated synergistic effects of thermal annealing: GO graphitization, effective nitrogen doping, and void formation.
- Achieved significantly enhanced electrical conductivity (3.64 × 10^3 S/m).
- Exhibited excellent EMI shielding effectiveness exceeding 25 dB in X-bands, with optimal shielding of 55.2 dB at 0.47 mm thickness.
Conclusions:
- Thermal annealing of GO/CuPc multilayers is an effective method for producing nitrogen-doped graphene films with controlled structures.
- The unique multilayer structure with voids acts as a Fabry-Pérot resonance cavity, enhancing EMI shielding.
- The developed material shows significant potential as a practical and competitive EMI shielding solution.
