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Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure
Hyung Jun Kim1, Hong Zheng1, Jong-Sung Park1
1Department of Materials Science and Engineering, Myongji University, Gyeonggi-do 17058, Republic of Korea.
Nanotechnology
|June 24, 2017
Summary
Researchers demonstrated artificial synapse behavior using Pt/CeO2/Pt devices. These memristive devices show polarity-dependent switching, emulating synaptic plasticity for neuromorphic computing.
Area of Science:
- Materials Science
- Neuroscience
- Electrical Engineering
Background:
- Artificial synaptic plasticity is crucial for developing neuromorphic computing systems.
- Memristive devices offer a promising platform for emulating synaptic functions due to their tunable resistance states.
Purpose of the Study:
- To investigate the memristive switching characteristics of Pt/CeO2/Pt devices for artificial synapse applications.
- To demonstrate polarity-dependent analog potentiation and depression mimicking synaptic behavior.
Main Methods:
- Fabrication of Pt/CeO2/Pt devices.
- Characterization of current-voltage (I-V) curves to observe memristive switching.
- Application of voltage pulses to emulate synaptic potentiation and depression.
Main Results:
- Pt/CeO2/Pt devices exhibited polarity-dependent analog memristive switching.
- A high resistance change ratio (>105) was achieved, essential for stable synaptic weight emulation.
- Synaptic weight modulation was controlled by voltage pulse amplitude, width, and repetition.
Conclusions:
- Cerium dioxide (CeO2) is a promising material for analog memristive switching elements.
- These devices show potential for use as artificial synapses in neuromorphic systems.
- The observed behavior is attributed to local inhomogeneities within the CeO2 layer.
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