Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS_{2}

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Ferroelectric materials offer nonvolatile control over electronic properties.
• Monolayer transition metal dichalcogenides (TMDs) like MoS_{2} are promising for next-generation electronics.
• Hybrid van der Waals heterostructures combine distinct material functionalities.

Purpose of the Study:

• To demonstrate nonvolatile modulation of MoS_{2} conduction characteristics using ferroelectric domain patterning.
• To investigate the electronic transport properties at the domain walls in MoS_{2}.
• To explore the tunability of the induced Schottky barrier height and its dependence on material parameters.

Main Methods:

• Scanning probe microscopy for controlled ferroelectric domain patterning.
• Electrical transport measurements (I-V characteristics) of monolayer MoS_{2}.
• Analysis using the thermionic emission model to extract Schottky barrier parameters.

Main Results:

• Achieved nonvolatile switching of MoS_{2} between transistor and junction states via domain patterning.
• Observed rectified current-voltage characteristics at domain walls, consistent with thermionic emission.
• Demonstrated tunable Schottky barrier height (0.38–0.57 eV) using a global back gate.

Conclusions:

• Scanning-probe-induced ferroelectric domain patterning provides a route to programmable functionalities in MoS_{2}.
• The tunable Schottky barrier height is sensitive to trapping states within the MoS_{2} conduction band.
• This approach offers insights into performance limitations and design strategies for hybrid van der Waals systems.