Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation
L A Gomes Perini1, P Bleuet1, J Filevich2
1Université Grenoble Alpes, F-38000 Grenoble, France.
This study introduces an improved scanning electron microscope (SEM)-based X-ray tomography system with in-line drift correction for enhanced stability and resolution. The new system utilizes a scientific CMOS camera for high-quality X-ray imaging across various scientific fields.
Area of Science:
- Physics
- Materials Science
- Engineering
Background:
- Scanning Electron Microscope (SEM)-based X-ray tomography systems generate X-rays via electron beam-anode interaction.
- Electron beam drift can degrade X-ray flux and image resolution, limiting system performance.
- High-performance X-ray detection is crucial for detailed imaging.
Purpose of the Study:
- To describe recent improvements in an SEM-based X-ray tomography system.
- To address electron beam drift issues impacting X-ray flux and spatial resolution.
- To evaluate the system's performance for microelectronics, technical textile, and material science applications.
Main Methods:
- Integration of a closed-loop control system with Fast Fourier Transform (FFT)-based image correlation for in-line drift correction.
- Utilizing a state-of-the-art scientific CMOS camera with high quantum efficiency (~60%) and low read-out noise (~1.2 electrons) for X-ray detection (indirect detection).
- Performance evaluation based on resolution, detectability, and scanning times.
Main Results:
- Successful implementation of an in-line drift correction system mitigating e-beam instability.
- High-quality X-ray detection achieved with a scientific CMOS camera.
- Demonstrated system efficacy across diverse fields including microelectronics, technical textiles, and material science.
Conclusions:
- The improved SEM-based X-ray tomography system offers enhanced stability and resolution.
- The integrated drift correction and advanced detector improve imaging capabilities.
- The system is suitable for demanding applications in microelectronics, technical textiles, and material science.
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