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Excited State Biexcitons in Atomically Thin MoSe2.

Jiajie Pei1, Jiong Yang, Xibin Wang1

  • 1School of Mechanical Engineering, Beijing Institute of Technology , Beijing 100081, China.

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|July 4, 2017
PubMed
Summary

Researchers triggered biexciton emission in atomically thin MoSe2 by tuning dielectric screening, trion density, and excitation power. This confirms a biexciton structure and enables room-temperature quantum devices.

Keywords:
MoSe2biexcitonfreestandingroom temperaturetwo-dimensional materials

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Area of Science:

  • Materials Science
  • Quantum Physics
  • Optoelectronics

Background:

  • Atomically thin semiconductors exhibit tightly bound biexcitons with potential for optoelectronic and quantum devices.
  • A discrepancy exists between theoretical models and experimental observations regarding biexciton structure.

Purpose of the Study:

  • Investigate biexciton formation mechanisms in atomically thin materials.
  • Clarify the fundamental structure of biexcitons.

Main Methods:

  • Engineered dielectric screening, trion density, and excitation power in MoSe2.
  • Analyzed biexciton binding energy and formation dynamics.

Main Results:

  • Successfully triggered biexciton emission in atomically thin MoSe2.
  • Observed binding energies and formation dynamics support a charge-trion biexciton model.
  • Demonstrated room-temperature existence of excited-state biexcitons in freestanding bilayer MoSe2.

Conclusions:

  • Biexcitons in MoSe2 consist of a charge attached to a trion (excited state).
  • Biexciton engineering in MoSe2 facilitates exploration of many-body interactions.
  • Enables development of room-temperature entangled photon sources.