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Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

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Published on: June 7, 2019

Submicron-scale broadband polarization beam splitter using CMOS-compatible materials.

Ming-Sheng Lai¹, Chia-Chien Huang^2,3

¹Department of Physics, National Chung Hsing University, 145, Xingda Rd., Taichung, 402, Taiwan, R.O.C.

Scientific Reports

|July 5, 2017

Summary

This summary is machine-generated.

We developed the smallest polarization beam splitter (PBS) to date, measuring just 600x790 nm². This compact device efficiently separates light polarizations using silicon and silica, enabling advanced photonic integrated circuits.

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Area of Science:

Photonics and Nanotechnology
Integrated Optics
Materials Science

Background:

Polarization beam splitters (PBS) are crucial components in optical systems.
Miniaturization of photonic devices is essential for high-density integration.
Existing PBS designs often require complex structures or additional coupling regions.

Purpose of the Study:

To design and demonstrate the world's smallest polarization beam splitter (PBS).
To achieve efficient separation of transverse-electric (TE) and transverse-magnetic (TM) light polarizations.
To utilize CMOS-compatible materials for potential large-scale fabrication.

Main Methods:

Proposed a novel PBS design with a footprint of 600x790 nm².
Employed two silicon waveguides with differing aspect ratios, adjoined without a coupling region.
Utilized silicon and silica, which are CMOS-compatible materials.

Main Results:

Achieved a record-small footprint for a PBS.
Demonstrated high polarization extinction ratios (~25 dB) for both TE and TM modes.
Reported low insertion losses (~0.87 dB for TE, ~1.09 dB for TM).
Maintained high performance over a 150 nm bandwidth (1475-1625 nm).
Showed tolerance to ±15 nm geometrical errors while preserving performance.

Conclusions:

The proposed submicron PBS is the smallest demonstrated to date.
The device offers excellent polarization splitting performance with low losses.
Its compact size and CMOS compatibility make it suitable for high-density photonic integrated circuits and nanophotonic applications.