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From Molecules to Materials: Engineering New Ionic Liquid Crystals Through Halogen Bonding
Published on: March 24, 2018
A quantitative measure of halogen bond activation in cocrystallization
Lucia Carlucci1, Angelo Gavezzotti
1Dipartimento di Chimica, Università degli Studi di Milano, via C. Golgi 19, 20133 Milano, Italy. lucia.carlucci@unimi.it angelo.gavezzotti@unimi.it.
This study quantifies halogen bond strengths using the PIXEL method. Optimized activators create halogen bonds comparable or stronger than hydrogen bonds, offering crystal engineering insights.
Area of Science:
- Supramolecular Chemistry
- Computational Chemistry
- Crystal Engineering
Background:
- Halogen bonding is a key non-covalent interaction in crystal engineering.
- Understanding and predicting halogen bond strength is crucial for designing functional materials.
- Activating groups significantly influence halogen bond characteristics.
Purpose of the Study:
- To theoretically investigate halogen bond lengths and energies.
- To quantify the effect of various activating agents on halogen bond strength.
- To provide guidelines for crystal engineers based on computational predictions.
Main Methods:
- Utilized the PIXEL computational method for theoretical investigation.
- Assessed the impact of fluoro-, nitro-, and ethynyl substitutions on halogen bonds.
- Correlated binding energies with electrostatic potential and atomic charges.
Main Results:
- Halogen bond strength is significantly enhanced by activating agents.
- The strongest halogen bonds were comparable or superior to strong hydrogen bonds.
- Halogen bonding was identified as a primary force in cocrystal packing.
Conclusions:
- The PIXEL method accurately predicts halogen bond strengths.
- Activating groups offer a tunable approach to designing strong halogen bonds.
- Computational parameters like electrostatic potential can guide crystal engineering efforts.
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