Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching

GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an etchant with a high acid concentration and low oxidant concentration at a relatively low temperature, the area surrounding the Au/GaAs interface could be etched selectively. Under the optimum conditions, Au-capped GaAs nanopillar arrays were formed with an ordered periodicity of 100 nm and pillar heights of 50 nm.