Related Experiment Video
Updated: Feb 27, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Kondo Effect in Magnetic Tunnel Junctions with an AlOx Tunnel Barrier
Chao Zheng1, Robert D Shull2, P J Chen2
1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong.
Abstract:
The influence of the magnetization configuration on Kondo effect in magnetic tunnel junction is investigated. In the parallel configuration, an additional resistance contribution (R*) below 40 K exhibits a logarithmic temperature dependence, indicating the presence of Kondo effect. However, in the anti-parallel configuration, the Kondo-effect-associated spin-flip scattering has a nontrivial contribution to the tunneling current, which compensates the reduction of the current directly caused by Kondo scattering, making R* disappear. These results indicate that suppression and restoration of Kondo effect can be experimentally achieved by altering the magnetization configuration, enhancing our understanding of the role of Kondo effect in spin-dependent transport.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Torque On A Current Loop In A Magnetic Field
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Magnetic Field Of A Current Loop

