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Landau-Zener Transition in a Continuously Measured Single-Molecule Spin Transistor.

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We studied Landau-Zener dynamics in single-ion magnets within spin transistors. Increasing sweep rates caused deviations from closed systems due to dephasing, successfully modeled by an adiabatic master equation.

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Area of Science:

  • Quantum physics
  • Condensed matter physics
  • Molecular magnetism

Background:

  • Single-ion magnets (SIMs) are promising for quantum technologies.
  • Understanding their dynamics in device geometries is crucial.
  • Landau-Zener transitions govern spin dynamics under changing magnetic fields.

Purpose of the Study:

  • To investigate Landau-Zener dynamics of a SIM in a spin-transistor.
  • To analyze deviations from closed-system behavior at varying field-sweep rates.
  • To identify the underlying physical mechanisms causing these deviations.

Main Methods:

  • Experimental monitoring of Landau-Zener dynamics.
  • Fabrication of a single-ion magnet in a spin-transistor setup.
  • Theoretical modeling using an adiabatic master equation with time-averaged dephasing operators.

Main Results:

  • Observed increasing deviations in spin reversal probability with higher field-sweep rates.
  • Identified dephasing as the cause of deviations in the low-conductance limit.
  • Successfully simulated experimental results using the adiabatic master equation.

Conclusions:

  • Dephasing, influenced by measurement time resolution, alters Landau-Zener dynamics in SIMs.
  • The spin-transistor geometry introduces environmental effects impacting quantum coherence.
  • This work provides insights into controlling quantum dynamics in molecular spintronic devices.