Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Modeling of Diode Forward Characteristics

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Blue to near-IR integrated PZT silicon nitride modulators for quantum and atomic applications.

Optics express·2026

Same author

Opportunities to strengthen US phosphorus supply resilience through circular pathways.

Proceedings of the National Academy of Sciences of the United States of America·2026

Same author

A loss-of-function variant in GFRAL associates with increased alcohol consumption in humans.

bioRxiv : the preprint server for biology·2026

Same author

Sphingosine 1-Phosphate Receptor 1 and 5 Reciprocally Regulate IL-13 and IL-9 Production in Atopic Dermatitis.

Allergy·2026

Same author

The OX40/OX40L Axis Promotes Th2 Activity and Impairs Regulatory T Cell Function in Atopic Dermatitis.

Allergy·2026

Same author

Erratum: Addition to "Chemical Compensation Challenges in Processing Antiferroelectric PbZrO<sub>3</sub> Thin Films".

ACS omega·2026

Search research articles

Related Experiment Video

Updated: Feb 26, 2026

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

Published on: June 27, 2022

Phenomenological Model for Defect Interactions in Irradiated Functional Materials.

Steven J Brewer¹, Cory D Cress², Samuel C Williams³

¹G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA.

Scientific Reports

|July 15, 2017

Summary

This summary is machine-generated.

A new model quantifies defect interactions in functional oxides, enabling performance tuning for applications like solid oxide fuel cells and superconductors. This method, using radiation, avoids doping complexities for clearer material analysis.

More Related Videos

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Related Experiment Videos

Last Updated: Feb 26, 2026

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

Published on: June 27, 2022

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Area of Science:

Materials Science
Solid-state Physics
Nanotechnology

Background:

Defect manipulation is key to tailoring functional material performance, impacting microelectronics, solid oxide fuel cells (SOFCs), superconductors, and ferroelectrics.
Traditional chemical doping methods for defect study are complicated by compositional heterogeneity.
Irradiation offers a versatile alternative to study defect interactions without doping complexities.

Purpose of the Study:

Develop a generalized phenomenological model to quantify defect interactions in functional oxides.
Compare material performance as a function of radiation dose.
Provide a framework for understanding defect behavior across diverse functional materials.

Main Methods:

Development of a generalized phenomenological model for defect interaction quantification.
Application of the model to analyze radiation dose effects on material performance.
Validation using historical data from ferroelectrics and expansion to SOFCs, MIECs, and superconductors.

Main Results:

The model successfully quantifies defect interactions and material performance changes with radiation dose.
Demonstrated applicability across various functional oxides including ferroelectrics, SOFC materials, and superconductors.
Insights gained into microstructural effects on defect interactions in ferroelectrics.

Conclusions:

The developed model provides a robust framework for understanding and predicting defect behavior in functional oxides.
Irradiation-based defect analysis offers a powerful alternative to chemical doping.
This research facilitates the optimization of functional materials for advanced technological applications.