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Updated: Feb 26, 2026

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
Aberration measurement of the probe-forming system of an electron microscope using two-dimensional materials
Hidetaka Sawada1, Christopher S Allen2, Shanshan Wang3
1Electron Physical Sciences Imaging Centre (ePSIC), Diamond Light Source Ltd, Didcot, Oxford OX11 0DE, UK; Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK; JEOL UK Ltd., Silver Court Watchmead Welwyn Garden City, Herts AL7 1LT, UK; Research acceleration program, Japan Science and Technology Agency, K's Gobancho, 7, Gobancho, Chiyoda-ku, Tokyo 102-0076, Japan.
Abstract:
The geometric and chromatic aberration coefficients of the probe-forming system in an aberration corrected transmission electron microscope have been measured using a Ronchigram recorded from monolayer graphene. The geometric deformations within individual local angular sub-regions of the Ronchigram were analysed using an auto-correlation function and the aberration coefficients for the probe forming lens were calculated. This approach only requires the acquisition of a single Ronchigram allowing rapid measurement of the aberration coefficients. Moreover, the measurement precision for defocus and two-fold astigmatism is improved over that which can be achieved from analysis of Ronchigrams recorded from amorphous films. This technique can also be applied to aberration corrected STEM imaging of any hexagonal two-dimensional material.
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