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Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.
Juan Arturo Alanis1, Dhruv Saxena2, Sudha Mokkapati2,3
1School of Physics and Astronomy and the Photon Science Institute, The University of Manchester , Manchester M13 9PL, U.K.
Nano Letters
|July 22, 2017
Summary
Single nanowire lasers offer room-temperature near-infrared lasing for silicon integration. Optimizing growth conditions minimizes disorder, leading to lower lasing thresholds and improved device performance.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Bottom-up III-V nanowires enable room-temperature near-infrared lasing.
- These nanowires are promising for nanoscale, silicon-integrable coherent light sources.
- Growth variations in bottom-up techniques can cause interwire disorder, impacting lasing.
Purpose of the Study:
- To develop an all-optical characterization technique to link geometrical and material parameters with lasing threshold.
- To investigate the relationship between nanowire inhomogeneity and nanolaser performance.
- To identify pathways for optimizing low-threshold nanolaser devices.
Main Methods:
- Utilized an all-optical characterization technique.
- Applied statistical analysis to correlate parameters with lasing threshold.
- Investigated multiple-quantum-well nanolasers.
Main Results:
- Low lasing threshold correlates with longer lasing wavelength, attributed to core losses.
- Achieved a best-in-group room-temperature lasing threshold of ~43 μJ cm⁻² under pulsed excitation.
- Demonstrated overall device yields exceeding 50%.
Conclusions:
- The study provides a method to optimize nanolasers by controlling material quality and dimensions.
- Findings offer a route to future low-threshold nanolaser development.
- High device yields and performance indicate a promising future for this nanolaser architecture.

