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Updated: Feb 25, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors

Li Xie1,2, Mengzhou Liao1,2, Shuopei Wang1,2

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Advanced Materials (Deerfield Beach, Fla.)
|July 29, 2017
PubMed

Keywords:
MoS2graphene contactsshort-channel effectsultrashort channels

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