Related Experiment Video
Updated: Feb 25, 2026

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
Published on: December 11, 2013
Plasmon-Induced Conductance Switching of an Electroactive Conjugated Polymer Nanojunction
Yong Ai1, Van Quynh Nguyen1,2, Jalal Ghilane1
1Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, Université Paris Diderot , 15 rue Jean-Antoine de Baïf, 75205 Paris Cedex 13, France.
Abstract:
A plasmonic molecular electronic device, consisting of poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires bridging an ultramicroelectrode and an indium tin oxide (ITO) substrate covered by gold nanoparticles (Au NPs), has been developed. Light irradiation of this device has a dramatic impact on its conductance. Polymer strands, maintained electrochemically in their oxidized, conducting state, reversibly switch to their insulating state upon irradiation by visible-wavelength light, resulting in a sharp decrease in the conductance. The high-conductance state is restored when the light is turned off. Switching depends on the wavelength and the intensity of the incident light. It is due to reversible reduction of the nanosized region of PEDOT nanowires in contact with a gold NP and is attributed to plasmon-induced hot-electron injection into the PEDOT. The high/low conductance ratio can be as great as 1000, and switching requires low light intensity (220 W/m2). These results could open the way to the design of a new family of optoelectronic switches.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

