Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Multiport Programmable Silicon Photonics Using Low-Loss Phase Change Material Sb<sub>2</sub>Se<sub>3</sub>.

Nano letters·2026

Same author

Ten-year outcomes of sleeve gastrectomy in a single-center series of 156 patients: weight loss and need of revisional surgery.

American journal of surgery·2025

Same author

Inverse Design of Unitary Transmission Matrices in Silicon Photonic Coupled Waveguide Arrays Using a Neural Adjoint Model.

ACS photonics·2025

Same author

Long-Term Effectiveness and Safety of Ustekinumab in Crohn's Disease: Results from a Large Real-Life Cohort Study.

Journal of clinical medicine·2024

Same author

A decision methodology for site-level ecosystem accounting.

Journal of environmental management·2024

Same author

30-day morbidity and mortality of revisional bariatric surgery - An international multi-centre collaborative (BROAD) study.

Obesity research & clinical practice·2024

Search research articles

Related Experiment Video

Updated: Feb 25, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Linear integrated optics in 3C silicon carbide.

Francesco Martini, Alberto Politi

|August 10, 2017

Summary

Researchers developed novel silicon carbide photonic devices with efficient grating couplers and high-quality ring resonators. This breakthrough enables integrated quantum and classical photonics on a single chip.

Area of Science:

Materials Science
Quantum Photonics
Nanotechnology

Background:

Integration of quantum and classical photonic components on a chip requires advanced photonic materials.
Cubic silicon carbide (3C SiC) offers superior optical properties and potential for defect-based quantum applications.
Heteroepitaxial growth of SiC on silicon substrates has limited photonic device development.

Purpose of the Study:

To overcome limitations in silicon carbide (SiC) photonics development.
To demonstrate novel SiC-based photonic components for integrated optical networks.
To leverage the unique properties of 3C SiC and its crystalline point defects for advanced photonic applications.

Main Methods:

Novel material fabrication approach for cubic silicon carbide (3C SiC) photonic devices.

More Related Videos

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Related Experiment Videos

Last Updated: Feb 25, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Design and characterization of grating couplers, sub-micrometer waveguides, and ring resonators.

Focus on overcoming challenges associated with SiC epitaxy on silicon substrates.

Main Results:

Demonstrated grating couplers with a coupling efficiency of -6 dB.
Fabricated sub-micrometer waveguides.
Achieved ring resonators with a high intrinsic quality factor up to 24,000.

Conclusions:

The developed SiC photonic components are foundational for linear optical networks.
These advancements are crucial for creating a wide range of photonic devices for nonlinear and quantum optics.
The novel fabrication approach enables enhanced integration of diverse optical functionalities on a single chip.