Related Experiment Video
Updated: Feb 25, 2026
07:45
Quasi-light Storage for Optical Data Packets
Published on: February 6, 2014
11.4K
Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band
Optics Express
|August 10, 2017
Abstract:
In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 Vpp, compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.
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