Trap Exploration in Amorphous Boron-Doped ZnO Films

Area of Science:

• Materials Science
• Solid State Physics
• Semiconductor Devices

Background:

• Amorphous boron-doped zinc oxide (ZnO:B) films are investigated for electronic applications.
• Understanding charge transport mechanisms is crucial for device performance.

Purpose of the Study:

• To explore trap characteristics in amorphous ZnO:B films.
• To analyze the conduction mechanisms in a metal-oxide-metal asymmetric structure.
• To determine trap energy levels and spacing.

Main Methods:

• Fabrication of Ni/ZnO:B/TaN devices using RF magnetron sputtering.
• Analysis of current-voltage (I-V) characteristics at various temperatures.
• Investigation of conduction mechanisms under different bias voltages.

Main Results:

• Ohmic conduction observed at positive bias due to TaN/ZnO:B interface.
• Hopping conduction observed at negative bias attributed to ZnO:B film traps.
• Temperature dependence of I-V characteristics indicates multiple-level traps.

Conclusions:

• Amorphous ZnO:B films contain multiple-level traps, not single-level traps.
• Extracted trap energy levels range from 0.46 to 0.64 eV.
• Extracted trap spacing is approximately 1.1 nm.