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Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements
J Tao1, C Z Zhao2,3,4, C Zhao5,6
1Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710016, China. tj.19861225@stu.xjtu.edu.cn.
Materials (Basel, Switzerland)
|August 18, 2017
Summary
Frequency dispersion in high-k dielectrics is analyzed by accounting for extrinsic factors like interfacial layers and parasitic effects. This allows for accurate assessment of intrinsic frequency dispersion and dielectric relaxation mechanisms.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid State Physics
Background:
- Frequency dispersion is commonly observed in capacitance-voltage (C-V) measurements of high-k dielectrics.
- Assessing intrinsic frequency dispersion requires mitigating extrinsic effects from interfacial layers and parasitic elements.
Purpose of the Study:
- To investigate and model the impact of lossy interfacial layers on frequency dispersion in high-k dielectrics.
- To analyze the influence of parasitic effects, including series resistance and back metal contacts, on frequency dispersion.
- To discuss the role of surface roughness in frequency dispersion phenomena.
Main Methods:
- Utilized a dual frequency technique to model the effects of the lossy interfacial layer.
- Investigated parasitic effects in metal-oxide-semiconductor (MOS) capacitors.
- Analyzed frequency dispersion data after accounting for extrinsic factors.
Main Results:
- Developed models to quantify the influence of interfacial layers and parasitic effects on frequency dispersion.
- Demonstrated that intrinsic frequency dispersion can be assessed after extrinsic effects are suppressed.
- Showed that relaxation behavior can be modeled using established relationships (Curie-von Schweidler, Kohlrausch-Williams-Watts, Havriliak-Negami) post-correction.
Conclusions:
- Extrinsic factors significantly impact observed frequency dispersion in high-k dielectrics.
- Accurate characterization of dielectric properties necessitates the removal of extrinsic dispersion effects.
- The study provides a framework for understanding and modeling dielectric relaxation mechanisms in complex capacitor structures.
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