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Suppression for an intermediate phase in ZnSb films by NiO-doping
Chao Li1,2, Guoxiang Wang3,4, Dongfeng Qi1,2
1Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, 315211, China.
Scientific Reports
|August 19, 2017
Summary
NiO-doped ZnSb films show enhanced thermal stability and a larger resistance ratio due to a single-step crystallization process. This makes them promising for phase-change memory applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Phase-change materials are crucial for non-volatile memory devices.
- Controlling crystallization and thermal stability is key for improving memory performance.
- Undoped ZnSb films exhibit complex crystallization behavior.
Purpose of the Study:
- To investigate the structural evolution and phase-change kinetics of NiO-doped ZnSb films.
- To understand the effect of NiO doping on the crystallization process and thermal properties.
- To evaluate the potential of NiO-doped ZnSb for phase-change memory applications.
Main Methods:
- Thin film deposition and characterization.
- Differential scanning calorimetry (DSC) for thermal analysis.
- Analysis of structural evolution and phase transition kinetics.
Main Results:
- NiO-doped ZnSb films exhibit a single-step crystallization process, directly forming a stable ZnSb phase.
- Doping enhances the amorphous/crystalline resistance ratio by five orders of magnitude.
- Crystallization temperature, data retention temperature, and activation energy are significantly improved.
- Kinetic exponent decreases, indicating ultrafast one-dimensional growth and heterogeneous phase transition.
Conclusions:
- NiO doping refines ZnSb grain growth, enhancing thermal stability and resistance ratio.
- The improved properties stem from NiO particles acting as nucleation sites.
- NiO-doped ZnSb films demonstrate excellent potential for advanced phase-change memory devices.
