Realizing p-Type MoS₂ with Enhanced Thermoelectric Performance by Embedding VMo₂S₄ Nanoinclusions

Area of Science:

• Materials Science
• Solid State Physics
• Nanotechnology

Background:

• Two-dimensional transition-metal dichalcogenide semiconductors (TMDCs) are promising thermoelectric materials.
• Developing both n-type and p-type TMDCs is crucial for efficient thermoelectric modules.
• Previous work established n-type MoS₂ via oxygen doping.

Purpose of the Study:

• To create a p-type MoS₂ thermoelectric material.
• To enhance the thermoelectric performance of MoS₂ through elemental doping.
• To investigate the role of vanadium doping in MoS₂ thermoelectric properties.

Main Methods:

• Vanadium doping to introduce VMo₂S₄ nanoinclusions into MoS₂.
• X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) for structural confirmation.
• Characterization of electrical conductivity, carrier concentration, mobility, and thermal conductivity.

Main Results:

• A p-type MoS₂ thermoelectric material was successfully synthesized.
• A maximum figure of merit (zT) of 0.18 was achieved.
• Vanadium doping improved electrical conductivity and reduced lattice thermal conductivity.
• VMo₂S₄ nanoinclusions enhanced carrier concentration, mobility, and phonon scattering.

Conclusions:

• Facile elemental doping is an effective strategy to improve TMDC thermoelectric performance.
• Vanadium doping offers a viable route to p-type MoS₂ thermoelectric materials.
• This work advances the development of TMDC-based thermoelectric devices.