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Orientation dependent interlayer stacking structure in bilayer MoS2 domains.

Shanshan Wang1, Hidetaka Sawada, Christopher S Allen

  • 1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.

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|August 25, 2017
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Summary
This summary is machine-generated.

Researchers studied bilayer molybdenum disulfide (MoS₂) atomic structure. They found that 60° rotated nuclei on monolayer MoS₂ can create defective boundaries, challenging pure stacking configurations.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Molybdenum disulfide (MoS₂) is a key 2D material with diverse electronic properties.
  • Understanding the atomic structure of bilayer MoS₂ is crucial for its applications.
  • Chemical vapor deposition (CVD) is a common method for growing MoS₂.

Purpose of the Study:

  • To investigate the atomic structure of small secondary domains forming bilayer MoS₂ on monolayer MoS₂.
  • To determine the crystallographic orientations and stacking configurations of these bilayer domains.
  • To understand the implications for defect formation during bilayer MoS₂ growth.

Main Methods:

  • Atomic resolution imaging using annular dark field scanning transmission electron microscopy (ADF-STEM).
  • Analysis of edge termination, lattice orientation, and stacking sequences.
  • Characterization of faceted geometry and three-fold symmetry in bilayer domains.

Main Results:

  • Bilayer MoS₂ domains exhibit faceted geometry with three-fold symmetry.
  • Two distinct orientations (2H and 3R stacking) were observed, differing by a 60° rotation.
  • ADF-STEM confirmed edge termination, lattice orientation, and stacking relative to the monolayer.

Conclusions:

  • Growth from 60° rotated nuclei on monolayer MoS₂ can lead to defective boundaries in continuous bilayer MoS₂.
  • Achieving pure AA' or AB bilayer stacking is challenging without a single nucleation seed.
  • The findings provide critical insights into controlling bilayer MoS₂ growth for defect-free materials.