Related Experiment Video
Updated: Feb 24, 2026

11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
16.1K
Probing charge transfer between molecular semiconductors and graphene
Aleksandar Matković1, Markus Kratzer1, Benjamin Kaufmann1
1Institute of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700, Leoben, Austria.
Scientific Reports
|August 27, 2017
Summary
Graphene field effect devices enable sensitive charge transfer detection. Researchers probed charge transfer between graphene and organic semiconductors, finding it
Area of Science:
- Materials Science
- Condensed Matter Physics
- Surface Science
Background:
- Graphene's unique electronic properties make it suitable for sensitive potentiometers.
- Organic semiconductor device performance is influenced by molecular alignment at electrode interfaces.
- Interfacial band engineering is key for graphene/organic semiconductor heterostructures.
Purpose of the Study:
- To demonstrate and investigate charge transfer between graphene and molecular semiconductors.
- To probe charge transfer dynamics during interfacial dipole formation.
- To understand the mechanism governing level alignment at graphene-organic interfaces.
Main Methods:
- In-situ measurements to directly observe charge transfer.
- Utilizing graphene-based field effect devices.
- Fabrication of graphene/organic semiconductor heterostructures with parahexaphenyl and C60.
Main Results:
- Direct evidence of charge transfer between graphene and parahexaphenyl/C60.
- Adsorbed molecules do not significantly alter graphene's electron scattering rates.
- Charge transfer is identified as the primary mechanism for level alignment.
Conclusions:
- The study quantifies charge transfer per molecule, indicating weak interactions.
- Graphene's electronic properties are modulated by charge transfer from adsorbed organic molecules.
- This work provides insights into interfacial engineering for graphene-based electronic devices.
Related Concept Videos
Semiconductors
1.6K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.6K
Metal-Semiconductor Junctions
1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Fermi Level Dynamics
829
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
829
Biasing of Metal-Semiconductor Junctions
705
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
705

