Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells
Jinbao Zhang1,2, Adam Hultqvist3, Tian Zhang2
1Physical Chemistry, Centre of Molecular Devices, Department of Chemistry, Ångström Laboratory, Uppsala University, SE-75120, Uppsala, Sweden.
Chemsuschem
|September 1, 2017
Summary
Low-temperature atomic layer deposition (ALD) of aluminum oxide (Al2O3) underlayers improves perovskite solar cell efficiency. This method enhances device reproducibility and opens avenues for flexible solar cell applications.
Area of Science:
- Materials Science
- Renewable Energy
- Nanotechnology
Background:
- Perovskite solar cells (PSCs) show high power conversion efficiencies but face challenges in large-scale application and reproducibility.
- Current methods often use high-temperature processed TiO2 underlayers, limiting scalability.
Purpose of the Study:
- To develop a low-temperature, scalable underlayer for PSCs using atomic layer deposition (ALD).
- To investigate the impact of aluminum oxide (Al2O3) underlayers on PSC performance and charge dynamics.
Main Methods:
- Fabrication of Al2O3 underlayers using low-temperature ALD with controlled deposition cycles.
- Integration of Al2O3 underlayers into perovskite solar cell architecture.
- Performance characterization including power conversion efficiency (PCE) and analysis of charge transfer resistance and recombination.
Main Results:
- ALD-Al2O3 underlayers effectively block electron recombination at the perovskite/fluorine-doped tin oxide interface.
- An optimal 5 nm Al2O3 layer (50 ALD cycles) yielded a highest PCE of 16.2%, significantly outperforming underlayer-free devices (11.0%).
- The thickness of the Al2O3 underlayer critically influences charge transfer resistance and recombination.
Conclusions:
- Low-temperature ALD Al2O3 is a viable and effective underlayer for enhancing PSC performance and reproducibility.
- This approach offers a scalable pathway for fabricating high-efficiency PSCs, including flexible devices.
