Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

VSEPR Theory and the Basic Shapes02:52

VSEPR Theory and the Basic Shapes

Overview of VSEPR Theory

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Synthetic Tuning of Exciton-Phonon Coupling in Janus WS<sub>2(1‑<i>x</i>)</sub>Se<sub>2<i>x</i></sub> Monolayers Revealed by Resonant Raman Excitation Spectroscopy for Optoelectronic Applications.

ACS applied nano materials·2026
Same author

Electron-phonon coupling and symmetry breaking in superconducting oxide interfaces near ferroelectric quantum criticality.

Nature materials·2026
Same author

Spontaneous Polarization Suppression of Exciton-Exciton Annihilation in Rhombohedral-Stacked Bilayer Molybdenum Disulfide.

ACS nano·2026
Same author

Dielectric-Conductive Dual-Shell Structure Design Overcome the Lightweight-High Strength and Electrical-Thermal Conductance Trade-Off.

Small methods·2026
Same author

Twist-Angle-Dependent Excitons in Moiré MoTe<sub>2</sub> Visualized by Cryogenic STEM and Monochromated EELS.

Nano letters·2026
Same author

Comparative genomics and chemical inactivation analysis of three Limosilactobacillus fermentum phages.

Food microbiology·2026

Related Experiment Video

Updated: Jun 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

Akinola D Oyedele1,2, Shize Yang3, Liangbo Liang2

  • 1Bredesen Center for Interdisciplinary and Graduate Education, University of Tennessee , Knoxville, Tennessee 37996, United States.

Journal of the American Chemical Society
|September 6, 2017
PubMed
Summary
This summary is machine-generated.

Few-layered palladium diselenide (PdSe2), a pentagonal 2D material, shows tunable electronic properties and air stability. Its anisotropic nature and wide band gap variation make it promising for next-generation 2D electronics.

More Related Videos

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Related Experiment Videos

Last Updated: Jun 17, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
11:21

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Published on: March 21, 2018

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials with high lattice symmetry typically exhibit isotropic properties.
  • Lower-symmetry 2D materials, like phosphorene, display anisotropic characteristics.
  • Noble transition metal dichalcogenides offer potential for novel electronic applications.

Purpose of the Study:

  • To investigate the atomic structure, electronic properties, and vibrational modes of few-layered palladium diselenide (PdSe2).
  • To explore the potential of PdSe2 as an air-stable, anisotropic 2D material for electronic devices.

Main Methods:

  • Exfoliation of few-layered PdSe2 from bulk crystals.
  • Micro-absorption optical spectroscopy and first-principles calculations.
  • Polarized Raman spectroscopy and field-effect transistor fabrication.

Main Results:

  • PdSe2 possesses a puckered, pentagonal 2D layered structure and is air-stable.
  • A wide band gap variation was observed, ranging from 0 eV (bulk) to 1.3 eV (monolayer).
  • Tunable ambipolar charge carrier conduction was demonstrated in PdSe2 field-effect transistors with high electron mobility (∼158 cm2 V−1 s−1).

Conclusions:

  • Few-layered PdSe2 is an air-stable, anisotropic material with significant band gap tunability.
  • Strong interlayer interactions were confirmed through thickness-dependent Raman spectroscopy.
  • The demonstrated electronic properties highlight PdSe2's potential for advanced 2D electronic applications.