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Impact of RRAM Read Fluctuations on the Program-Verify Approach.

David M Nminibapiel1, Dmitry Veksler2, J-H Kim2

  • 1Engineering Physics Division at National Institute Standards and Technology (NIST), Gaithersburg, MD 20899 USA.

IEEE Electron Device Letters : a Publication of the IEEE Electron Devices Society
|September 12, 2017
PubMed
Summary
This summary is machine-generated.

Resistive random-access memory (RRAM) faces commercialization hurdles due to unreliable programming. This study reveals that fluctuation-induced false-reading, not resistance relaxation, undermines program-verify methods in RRAM.

Keywords:
FluctuationsInstabilityProgram-VerifyRRAMRelaxation

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Oxide-based resistive memory (RRAM) exhibits stochastic conductive filament behavior, hindering commercialization.
  • Program-verify methodologies are desirable for RRAM but face challenges.
  • Previous studies identified resistance state relaxation as the primary issue limiting program-verify effectiveness.

Purpose of the Study:

  • To investigate the fundamental reasons behind the failure of program-verify methods in RRAM.
  • To differentiate between resistance state relaxation and other factors affecting programming reliability.
  • To elucidate the impact of filament fluctuations on RRAM performance.

Main Methods:

  • Experimental analysis of resistance state evolution in oxide-based RRAM devices.
  • Characterization of SET/RESET programming cycles.
  • Investigation of resistance fluctuation phenomena post-programming.

Main Results:

  • Resistance state relaxation is not the primary cause of program-verify failure in RRAM.
  • Fluctuation-induced false-reading (triggering) significantly disrupts the verify mechanism.
  • A large resistance distribution tail is observed immediately after programming due to these fluctuations.

Conclusions:

  • The core issue defeating RRAM program-verify methods is fluctuation-induced false-reading.
  • This finding has critical implications for the write/erase speed and overall reliability of RRAM.
  • Further research should focus on mitigating fluctuation effects for improved RRAM performance.