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Updated: Feb 11, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

Wenjun Li1, Matt D Brubaker2, Bryan T Spann2

  • 1University of Notre Dame, Notre Dame, IN 46656 USA.

IEEE Electron Device Letters : a Publication of the IEEE Electron Devices Society
|May 4, 2018
PubMed
Summary

Researchers demonstrated wrap-around gate gallium nitride (GaN) nanowire MOSFETs. These devices show excellent performance, making them suitable for low-power Internet of Things applications.

Keywords:
Gallium nitrideMOSFETnanowire

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Gallium Nitride (GaN) nanowires offer unique properties for advanced electronic devices.
  • Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are fundamental components in modern electronics.
  • Developing efficient low-power devices is crucial for the Internet of Things (IoT).

Purpose of the Study:

  • To experimentally demonstrate wrap-around gate GaN nanowire MOSFETs.
  • To characterize the electrical performance of these novel devices.
  • To assess their potential for low-power electronic applications.

Main Methods:

  • Fabrication of GaN nanowire MOSFETs with a wrap-around gate structure.
  • Utilized Aluminum Oxide (Al2O3) as the gate dielectric.
  • Experimental characterization of key device parameters including subthreshold slope, on-current, and on/off ratio.

Main Results:

  • Achieved a minimum subthreshold slope of 60 mV/dec and an average of 68 mV/dec.
  • Demonstrated excellent drain-induced barrier lowering of 27 mV/V.
  • Reported an on-current of 42 microA/microm, an on/off ratio exceeding 10^8, and an intrinsic transconductance of 27.8 microS/microm.
  • Calculated a switching efficiency figure of merit (Q) of 0.41 microS/microm-dec/mV.

Conclusions:

  • The fabricated GaN nanowire MOSFETs exhibit high performance characteristics.
  • These devices are highly promising for next-generation low-power applications.
  • Potential applications include sensors and radio frequency (RF) components for the Internet of Things (IoT).