Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

587
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
587
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

1.2K
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.2K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

880
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
880
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

910
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
910
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

698
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
698
Biasing of FET01:22

Biasing of FET

766
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
766

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Signal preprocessing for foreign body detection using terahertz real-time non-destructive imaging system.

PloS one·2025
Same author

Motion Cancellation Technique of Vital Signal Detectors Based on Continuous-Wave Radar Technology.

Sensors (Basel, Switzerland)·2025
Same author

Fully Integrated 24-GHz 1TX-2RX Transceiver for Compact FMCW Radar Applications.

Sensors (Basel, Switzerland)·2024
Same author

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.

Sensors (Basel, Switzerland)·2023
Same author

A Multimode 28 GHz CMOS Fully Differential Beamforming IC for Phased Array Transceivers.

Sensors (Basel, Switzerland)·2023
Same author

Reconstruction of Range-Doppler Map Corrupted by FMCW Radar Asynchronization.

Sensors (Basel, Switzerland)·2023

Related Experiment Video

Updated: Feb 23, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

755

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

Jong-Ryul Yang1, Seong-Tae Han2, Donghyun Baek3

  • 1Department of Electronic Engineering, Yeungnam University, Gyeongsan, Gyeongbuk-do 38541, Korea. jryang@yu.ac.kr.

Sensors (Basel, Switzerland)
|September 12, 2017
PubMed
Summary

We developed a new sub-terahertz (THz) detector using complementary metal-oxide-semiconductor (CMOS) technology. This detector features a subthreshold preamplifier to significantly enhance signal-to-noise ratio (SNR) for THz imaging applications.

Keywords:
CMOS integrated circuitTHz detectorTHz imagingdifferential detectorintegrated antennaraster scanningsubthreshold amplifiers

More Related Videos

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
08:25

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

3.0K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.5K

Related Experiment Videos

Last Updated: Feb 23, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

755
Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
08:25

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

3.0K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.5K

Area of Science:

  • Electronics
  • Terahertz Technology
  • Semiconductor Devices

Background:

  • Terahertz (THz) imaging systems require sensitive and low-noise detectors.
  • Conventional complementary metal-oxide-semiconductor (CMOS) detectors often face limitations in voltage responsivity and signal-to-noise ratio (SNR).
  • Integrating preamplifiers can improve detector performance but may introduce additional noise and DC offsets.

Purpose of the Study:

  • To propose and characterize a novel differential-type CMOS sub-terahertz (THz) detector.
  • To enhance voltage responsivity and effective SNR by incorporating a subthreshold preamplifier.
  • To reduce the overall noise in THz imaging systems by mitigating the main amplifier's noise contribution.

Main Methods:

  • Design and fabrication of a differential-type CMOS sub-THz detector with an integrated subthreshold preamplifier.
  • The subthreshold preamplifier is self-biased and includes a dummy structure to cancel DC offsets.
  • Fabrication was performed using 0.25 μm CMOS technology, incorporating a low drop-out regulator, current reference blocks, and an integrated antenna.

Main Results:

  • Achieved a voltage responsivity of 2020 kV/W and a noise equivalent power (NEP) of 76 pW/√Hz at a gate bias of 0.5 V.
  • Demonstrated an effective SNR of 70.9 dB at a 103 Hz chopping frequency with 0.7 W/m² input signal power density.
  • The detector achieved a dynamic range of 44.59 dB for raster-scanned THz imaging.

Conclusions:

  • The proposed subthreshold preamplifier effectively boosts voltage responsivity and SNR in CMOS sub-THz detectors.
  • The integrated design minimizes noise contributions from subsequent amplification stages, crucial for THz imaging.
  • The fabricated 200 GHz detector demonstrates high performance suitable for advanced THz imaging applications.