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Related Experiment Video

Updated: Feb 23, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications.

Pascual Muñoz1,2, Gloria Micó3, Luis A Bru4

  • 1Photonics Research Labs, Universitat Politècnica de València, c/ Camino de Vera s/n, 46021 Valencia, Spain. pascual.munoz@upv.es.

Sensors (Basel, Switzerland)
|September 13, 2017
PubMed
Summary

Silicon nitride photonics offers broad applications due to its material properties. This review details advanced silicon nitride waveguide platforms for versatile optical technologies.

Keywords:
birefringencefull-field optical measurementsgeneric integrationgroup indexgroup velocity dispersionmulti-project waferphotonic integrated circuitspropagation losssilicon nitride photonicssilicon photonics

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Area of Science:

  • Integrated photonics
  • Materials science
  • Optical engineering

Background:

  • Silicon nitride (SiN) photonics leverages broadband material properties for diverse applications.
  • These applications span biophotonics, telecommunications, data communications, optical signal processing, and sensing.
  • The operational wavelength range extends from visible to mid-infrared.

Purpose of the Study:

  • To review the current state-of-the-art in silicon nitride strip waveguide platforms.
  • To present experimental results on a novel 300 nm guiding film height silicon nitride platform.

Main Methods:

  • Literature review of silicon nitride waveguide technologies.
  • Experimental fabrication and characterization of a 300 nm film height SiN platform.

Main Results:

  • Comprehensive overview of existing SiN waveguide platforms.
  • Demonstration of a versatile 300 nm guiding film height SiN platform.

Conclusions:

  • Silicon nitride waveguide platforms are crucial for advancing integrated photonics.
  • The developed 300 nm platform shows promise for a wide range of optical applications.