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Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M H T Dastjerdi1, E M Fiordaliso2, E D Leshchenko3

  • 1Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University , Hamilton, Ontario Canada , L8S 4L7.

Nano Letters
|September 15, 2017
PubMed

Keywords:
GaAsberylliumdopinggallium arsenidemolecular beam epitaxynanowiresself-assisted

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