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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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On current transients in MoS2 Field Effect Transistors.

Massimo Macucci1, Gerry Tambellini1, Dmitry Ovchinnikov2

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Summary
This summary is machine-generated.

Slow transients in MoS2 transistors stem from two trapping mechanisms: silicon oxide substrate and channel surface trapping. These phenomena complicate low-frequency noise measurements and explain literature discrepancies.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Device Physics

Background:

  • Molybdenum disulfide (MoS2)-based transistors are promising for electronic applications.
  • Understanding transient current behavior is crucial for device reliability and performance.
  • Slow transients can impede accurate characterization of electronic devices.

Purpose of the Study:

  • To experimentally investigate the origins of slow transients in MoS2 transistor currents.
  • To differentiate between various charge trapping mechanisms affecting device performance.
  • To elucidate the impact of these transients on low-frequency noise measurements.

Main Methods:

  • Simultaneous measurement of gate and drain currents in MoS2 transistors.
  • Comparative analysis of current transients under varying conditions.
  • Investigation of trapping mechanisms and their associated time constants.

Main Results:

  • Identified two distinct charge trapping mechanisms: one in the silicon oxide substrate and another at the MoS2 channel surface.
  • Observed substrate trapping with time constants of tens of seconds, involving out-of-plane charge motion.
  • Found surface trapping with significantly longer time constants, especially under vacuum conditions.

Conclusions:

  • Slow transients in MoS2 transistors are attributed to at least two independent trapping processes.
  • These trapping phenomena complicate reliable low-frequency noise measurements by hindering steady-state conditions.
  • The identified mechanisms may resolve contradictory findings in the literature regarding flicker noise in MoS2 devices.