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Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS2

Hyeokshin Kwon1, Kiyoung Lee1, Jinseong Heo1

  • 1Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea.

Advanced Materials (Deerfield Beach, Fla.)
|September 19, 2017
PubMed

Keywords:
edge contactscanning tunneling microscopy (STM)semiconductor-metal boundarytransition-metal dichalcogenides

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