Related Experiment Video
Updated: Feb 22, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Trion Valley Coherence in Monolayer Semiconductors
Kai Hao1, Lixiang Xu1, Fengcheng Wu1
1Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, TX 78712, USA.
Researchers explored trion valley coherence in monolayer MoSe2 using ultrafast spectroscopy. They found this quantum coherence lasts for hundreds of femtoseconds, opening new avenues for valleytronics applications.
Area of Science:
- Quantum physics
- Condensed matter physics
- Materials science
Background:
- Valleytronics utilizes electron valley pseudospin for information processing.
- Monolayer transition metal dichalcogenides (TMDs) show promise for valleytronics due to optical control of exciton valley coherence.
- Charged excitons (trions) offer potential advantages over neutral excitons for valley pseudospin control.
Purpose of the Study:
- To investigate and characterize trion valley coherence in monolayer TMDs, which has been experimentally challenging.
- To explore the potential of trions as information carriers in valleytronics.
Main Methods:
- Ultrafast two-dimensional coherent spectroscopy was employed.
- Resonant generation and detection of trion valley coherence in monolayer MoSe2.
Main Results:
- Trion valley coherence was successfully generated and detected in monolayer MoSe2.
- The observed trion valley coherence persisted for a few hundred femtoseconds.
- The mechanisms limiting trion valley coherence were found to differ from those of exciton valley coherence.
Conclusions:
- Trion valley coherence is experimentally accessible and has a measurable lifetime.
- The distinct coherence mechanisms suggest unique control strategies for trion-based valleytronics.
- This work paves the way for utilizing trions in future valleytronic devices.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Dielectric Polarization in a Capacitor
Valence Bond Theory
Valence Bond Theory
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....

