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Effect of Cr-doping on the electronic structure and work function of α-Fe2O3 thin films
Xiaolong Li1, Li Chen, Hongmei Liu
1Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083, People's Republic of China. lqiao@ustb.edu.cn.
Abstract:
We investigate the effect of Cr-doping on the properties of α-Fe2O3(001) thin films with Fe termination using the local density approximation plus a Hubbard U correction. We find that both the doping site and concentration of Cr atoms dramatically affect the electronic structure and work function (WF) of α-Fe2O3 films. The results demonstrate that it is most energetically favorable for Cr atoms to substitute the Fe atoms in the sub-surface of α-Fe2O3 thin films. The doping of Cr atoms in the sub-surface not only lowers the band gap of the film but also greatly enhances the work function by 0.9 eV with respect to the pure α-Fe2O3 film. The increase of WF correlates with the reduction of occupied O px/py states at the top valence band which leads to a decrease of the Fermi energy. As the Cr concentration changes from 4.2% to 16.7%, the WF firstly increases, and then drops. The WF reaches a maximum of 6.61 eV for the Cr concentration of 8.3%. These results suggest that doping Cr atoms in a α-Fe2O3(001) thin film can increase the corrosion potential and benefits the protection of steel from corrosion.